发明授权
- 专利标题： Nonvolatile memory device and method for manufacturing same
- 专利标题（中）： 非易失性存储器件及其制造方法
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申请号： US13937906申请日： 2013-07-09
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公开(公告)号： US08765565B2公开(公告)日： 2014-07-01
- 发明人: Kenji Aoyama , Kazuhiko Yamamoto , Satoshi Ishikawa , Shigeto Oshino
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： JP Minato-ku
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2010-200620 20100908
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/20
摘要：
According to one embodiment, a nonvolatile memory device includes a selection element layer and a nanomaterial aggregate layer. The selection element layer includes silicon. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer includes a plurality of micro conductive bodies and fine particles dispersed in a plurality of gaps between the micro conductive bodies. At least a surface of the fine particle is made of an insulating material other than silicon oxide.
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