Invention Grant
US08758497B2 Sputtering target of sintered Ti—Nb based oxide, thin film of Ti—Nb based oxide, and method of producing the thin film
有权
烧结Ti-Nb系氧化物的溅射靶,Ti-Nb系氧化物的薄膜,以及薄膜的制造方法
- Patent Title: Sputtering target of sintered Ti—Nb based oxide, thin film of Ti—Nb based oxide, and method of producing the thin film
- Patent Title (中): 烧结Ti-Nb系氧化物的溅射靶,Ti-Nb系氧化物的薄膜,以及薄膜的制造方法
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Application No.: US13258137Application Date: 2010-03-26
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Publication No.: US08758497B2Publication Date: 2014-06-24
- Inventor: Hideo Takami , Masataka Yahagi
- Applicant: Hideo Takami , Masataka Yahagi
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2009-078264 20090327; JP2009-238112 20091015
- International Application: PCT/JP2010/055329 WO 20100326
- International Announcement: WO2010/110412 WO 20100930
- Main IPC: C09D1/00
- IPC: C09D1/00 ; C23C14/08 ; C04B35/495 ; C04B35/462 ; C04B35/46 ; C04B35/499 ; C04B35/626

Abstract:
Provided is a sputtering target of sintered Ti—Nb based oxide, wherein the sputtering target consists of titanium (Ti), niobium (Nb), and remainder being oxygen and unavoidable impurities, and the atomic ratio of Ti and Nb is 0.39≦(Nb/(Ti+Nb))≦0.79. The sputtering target of sintered Ti—Nb based oxide has a high refractive index and a low extinction coefficient. Also provided is a thin film of Ti—Nb based oxide obtained by using the foregoing target, which enables high-rate deposition. The thin film has superior transmittance, is subject to minimal reduction and variation of reflectivity, and is useful as an interference film or a protective film of an optical information recording medium, or as a part of a constituent layer of an optical recording medium. The thin film can also be applied to a glass substrate; that is, it can be used as a heat reflecting film, an antireflection film, or an interference filter.
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