发明授权
- 专利标题: Semiconductor device and power supply device
- 专利标题(中): 半导体装置及电源装置
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申请号: US13109423申请日: 2011-05-17
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公开(公告)号: US08754590B2公开(公告)日: 2014-06-17
- 发明人: Ryosei Makino , Kenichi Yokota , Tomohiro Tazawa
- 申请人: Ryosei Makino , Kenichi Yokota , Tomohiro Tazawa
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Mattingly & Malur, PC
- 优先权: JP2010-122971 20100528; JP2010-257090 20101117
- 主分类号: H05B37/02
- IPC分类号: H05B37/02 ; H02M7/06
摘要:
A power supply topology is used in which a transistor is provided on the side of an output node of a rectifying circuit. An inductor is provided on the side of a reference node, a resistor is inserted between the transistor and the inductor, and one end of the resistor is coupled to a ground power supply voltage of a PFC circuit. The PFC circuit includes a square circuit which squares a result of multiplication of an input voltage detection signal and feedback information (output voltage of an error amplifier circuit). The PFC circuit drives on the transistor when a detection voltage developed at the resistor reaches zero, and drives off the transistor when the detection signal reaches an output signal of the square circuit.
公开/授权文献
- US20110292704A1 SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE 公开/授权日:2011-12-01
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