Invention Grant
- Patent Title: Strained channel transistor structure and method
- Patent Title (中): 应变通道晶体管结构和方法
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Application No.: US12857543Application Date: 2010-08-16
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Publication No.: US08754447B2Publication Date: 2014-06-17
- Inventor: Jin Ping Liu , Alex K H See , Mei Sheng Zhou , Liang Choo Hsia
- Applicant: Jin Ping Liu , Alex K H See , Mei Sheng Zhou , Liang Choo Hsia
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Horizon IP Pte Ltd
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A transistor device structure comprising: a substrate portion formed from a first material; and a source region, a drain region and a channel region formed in said substrate, the source and drain regions comprising a plurality of islands of a second material different from the first material, the islands being arranged to induce a strain in said channel region of the substrate.
Public/Granted literature
- US20100308374A1 STRAINED CHANNEL TRANSISTOR STRUCTURE AND METHOD Public/Granted day:2010-12-09
Information query
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