Invention Grant
US08748309B2 Integrated circuits with improved gate uniformity and methods for fabricating same
有权
具有改善的栅极均匀性的集成电路及其制造方法
- Patent Title: Integrated circuits with improved gate uniformity and methods for fabricating same
- Patent Title (中): 具有改善的栅极均匀性的集成电路及其制造方法
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Application No.: US13618035Application Date: 2012-09-14
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Publication No.: US08748309B2Publication Date: 2014-06-10
- Inventor: Ruilong Xie , Xiuyu Cai , Kangguo Cheng , Ali Khakifirooz
- Applicant: Ruilong Xie , Xiuyu Cai , Kangguo Cheng , Ali Khakifirooz
- Applicant Address: KY Grand Cayman US NY Armonk
- Assignee: GLOBALFOUNDRIES, Inc.,International Business Machines Corporation
- Current Assignee: GLOBALFOUNDRIES, Inc.,International Business Machines Corporation
- Current Assignee Address: KY Grand Cayman US NY Armonk
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
Integrated circuits with improved gate uniformity and methods for fabricating such integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a structure including a first region and a second region and a structure surface formed by the first region and the second region. The first region is formed by a first material and the second region is formed by a second material. In the method, the structure surface is exposed to a gas cluster ion beam (GCIB) and an irradiated layer is formed in the structure in both the first region and the second region. The irradiated layer is etched to form a recess.
Public/Granted literature
- US20140077274A1 INTEGRATED CIRCUITS WITH IMPROVED GATE UNIFORMITY AND METHODS FOR FABRICATING SAME Public/Granted day:2014-03-20
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