发明授权
- 专利标题： Semiconductor device and method of manufacturing the semiconductor device
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US14022565申请日： 2013-09-10
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公开(公告)号： US08742521B2公开(公告)日： 2014-06-03
- 发明人: Makoto Ueki , Naoya Inoue , Yoshihiro Hayashi
- 申请人： Renesas Electronics Corporation
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Foley & Lardner LLP
- 优先权： JP2011-049236 20110307
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L21/02 ; H01L23/552 ; H01L21/00
摘要：
A semiconductor device in which MRAM is formed in a wiring layer A contained in a multilayered wiring layer, the MRAM having at least two first magnetization pinning layers in contact with a first wiring formed in a wiring layer and insulated from each other, a free magnetization layer overlapping the two first magnetization pinning layers in a plan view, and connected with the first magnetization pinning layers, a non-magnetic layer situated over the free magnetization layer, and a second magnetization pinning layer situated over the non-magnetic layer.
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