Invention Grant
- Patent Title: Method of forming semiconductor device
- Patent Title (中): 半导体器件形成方法
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Application No.: US14091680Application Date: 2013-11-27
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Publication No.: US08741767B2Publication Date: 2014-06-03
- Inventor: Yoonmoon Park , Jae-Hwang Sim , Se-Young Park , Keonsoo Kim , Jaehan Lee , Seungwon Seong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2009-00112098 20091119
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L27/32

Abstract:
A semiconductor device includes a semiconductor substrate including a cell region and a core region adjacent to the cell region, active regions in the cell region and the core region, an interlayer insulating layer covering the active regions, upper cell contacts penetrating the interlayer insulating layer in the cell region, the upper cell contacts being adjacent to each other along a first direction and being electrically connected to the active regions, and core contacts penetrating the interlayer insulating layer in the active regions of the core region, the core contacts being adjacent to each other along the first direction and including upper connection core contacts electrically connected to the active regions, and dummy contacts adjacent to the upper connection core contacts, the dummy contacts being insulated from the active regions.
Public/Granted literature
- US20140087555A1 METHOD OF FORMING SEMICONDUCTOR DEVICE Public/Granted day:2014-03-27
Information query
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