Invention Grant
- Patent Title: Method of manufacturing nanoimprint stamp
- Patent Title (中): 制造纳米压印印花的方法
-
Application No.: US14072116Application Date: 2013-11-05
-
Publication No.: US08741162B2Publication Date: 2014-06-03
- Inventor: Byung-kyu Lee , Du-hyun Lee , Woong Ko
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0128624 20101215
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00

Abstract:
Methods of manufacturing a nanoimprint stamp are provided. The method may include forming a pattern on a surface of a master substrate, depositing an etch barrier layer on a surface of a stamp substrate, coating a photoresist on one of the surfaces of the master substrate and the stamp substrate on which an etch barrier layer is formed, forming a photoresist pattern by pressing the master substrate against the stamp substrate, forming a hard mask by etching the etch barrier layer using the photoresist pattern, and etching the stamp substrate using the hard mask as an etch mask.
Public/Granted literature
- US20140054264A1 METHOD OF MANUFACTURING NANOIMPRINT STAMP Public/Granted day:2014-02-27
Information query