Invention Grant
- Patent Title: Method of generating a hole or recess or well in a substrate
- Patent Title (中): 在基材中产生孔或凹槽或孔的方法
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Application No.: US13203492Application Date: 2010-03-01
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Publication No.: US08736026B2Publication Date: 2014-05-27
- Inventor: Christian Schmidt , Leander Dittmann
- Applicant: Christian Schmidt , Leander Dittmann
- Applicant Address: CH Lausanne
- Assignee: picoDrill SA
- Current Assignee: picoDrill SA
- Current Assignee Address: CH Lausanne
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- International Application: PCT/EP2010/001249 WO 20100301
- International Announcement: WO2011/038788 WO 20110407
- Main IPC: H01L23/544
- IPC: H01L23/544
Abstract:
The present invention relates to a method of generating a hole or recess or well in an electrically insulating or semiconducting substrate, and to a hole or recess or well in a substrate generated by this method. The invention also relates to an array of holes or recesses or wells in a substrate generated by the method. The invention also relates to a device for performing the method according to the present invention.
Public/Granted literature
- US20110304023A1 METHOD OF GENERATING A HOLE OR RECESS OR WELL IN A SUBSTRATE Public/Granted day:2011-12-15
Information query
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