发明授权
US08735968B2 Integrated MOSFET devices with Schottky diodes and associated methods of manufacturing
有权
具有肖特基二极管和相关制造方法的集成MOSFET器件
- 专利标题： Integrated MOSFET devices with Schottky diodes and associated methods of manufacturing
- 专利标题（中）： 具有肖特基二极管和相关制造方法的集成MOSFET器件
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申请号： US12980143申请日： 2010-12-28
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公开(公告)号： US08735968B2公开(公告)日： 2014-05-27
- 发明人: Tiesheng Li , Lei Zhang
- 申请人： Tiesheng Li , Lei Zhang
- 申请人地址： US CA San Jose
- 专利权人： Monolithic Power Systems, Inc.
- 当前专利权人： Monolithic Power Systems, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Perkins Coie LLP
- 主分类号： H01L27/105
- IPC分类号： H01L27/105 ; H01L21/8234
摘要：
The present technology discloses a semiconductor die integrating a MOSFET device and a Schottky diode. The semiconductor die comprises a MOSFET area comprising the active region of MOSFET, a Schottky diode area comprising the active region of Schottky diode, and a termination area comprising termination structures. Wherein the Schottky diode area is placed between the MOSFET area and the termination area such that the Schottky diode area surrounds the MOSFET area.
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