发明授权
US08728867B2 Semiconductor device, manufacturing method of semiconductor device, and power source device
有权
半导体装置，半导体装置的制造方法以及电源装置
- 专利标题： Semiconductor device, manufacturing method of semiconductor device, and power source device
- 专利标题（中）： 半导体装置，半导体装置的制造方法以及电源装置
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申请号： US13355792申请日： 2012-01-23
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公开(公告)号： US08728867B2公开(公告)日： 2014-05-20
- 发明人: Kozo Shimizu , Keishiro Okamoto , Nobuhiro Imaizumi , Tadahiro Imada , Keiji Watanabe
- 申请人： Kozo Shimizu , Keishiro Okamoto , Nobuhiro Imaizumi , Tadahiro Imada , Keiji Watanabe
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Kratz, Quintos & Hanson, LLP
- 优先权： JP2011-36254 20110222
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A manufacturing of a semiconductor device includes forming one of a layer with a first metal and the layer with a second metal on one of a semiconductor chip mounting area of a support plate and a back surface of the semiconductor chip; forming the other of the layer with the first metal and the layer with the second metal on an area corresponding to a part of the area, in which one of the layer with the first metal and the layer with the second metal, of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and forming a layer which includes an alloy with the first metal and the second metal after positioning the semiconductor chip in the semiconductor chip mounting area to bond the semiconductor chip with the semiconductor chip mounting area.
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