发明授权
- 专利标题： Single-source precursor for semiconductor nanocrystals
- 专利标题（中）： 半导体纳米晶体的单源前体
-
申请号： US13617843申请日： 2012-09-14
-
公开(公告)号： US08721926B2公开(公告)日： 2014-05-13
- 发明人: Manzoor Koyakutty , Aditya Verma , Sampat Raj Vedera , Narendra Kumar , Thundyil Raman Narayana Kutty
- 申请人： Manzoor Koyakutty , Aditya Verma , Sampat Raj Vedera , Narendra Kumar , Thundyil Raman Narayana Kutty
- 申请人地址： IN New Delhi
- 专利权人： The Director General Defence Research & Development Organisation
- 当前专利权人： The Director General Defence Research & Development Organisation
- 当前专利权人地址： IN New Delhi
- 代理机构： The Webb Law Firm
- 优先权： IN2612/DEL/2005 20050929
- 主分类号： C09K11/54
- IPC分类号： C09K11/54 ; C09K11/56
摘要：
A single-source solid precursor matrix for semiconductor nanocrystals includes 45-55% by weight of zinc, 28-35% by weight of oxygen, 0.70-1.2% by weight of carbon, 1.5-2.5% by weight of hydrogen, 4-6% by weight of nitrogen, 5-7% by weight of sulphur and 1-5% by weight of dopant ions with respect to the weight of zinc atoms. Doped semiconductor nanocrystals for multicolor displays and bio markers include 60-65% by weight of zinc, 30-32% by weight of sulphur, 1.2-1.3% by weight of copper and 1.2-1.3% by weight of dopant ions.
公开/授权文献
- US20130082216A1 Single-Source Precursor for Semiconductor Nanocrystals 公开/授权日：2013-04-04
信息查询
