Invention Grant
- Patent Title: Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer
- Patent Title (中): 具有锗底层寄生漏电阻层的锗活性层的半导体器件
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Application No.: US13629178Application Date: 2012-09-27
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Publication No.: US08710490B2Publication Date: 2014-04-29
- Inventor: Ravi Pillarisetty , Niti Goel , Han Wui Then , Van H. Le , Willy Rachmady , Marko Radosavljevic , Gilbert Dewey , Benjamin Chu-Kung
- Applicant: Ravi Pillarisetty , Niti Goel , Han Wui Then , Van H. Le , Willy Rachmady , Marko Radosavljevic , Gilbert Dewey , Benjamin Chu-Kung
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/02

Abstract:
Semiconductor devices having germanium active layers with underlying parasitic leakage barrier layers are described. For example, a semiconductor device includes a first buffer layer disposed above a substrate. A parasitic leakage barrier is disposed above the first buffer layer. A second buffer layer is disposed above the parasitic leakage barrier. A germanium active layer is disposed above the second buffer layer. A gate electrode stack is disposed above the germanium active layer. Source and drain regions are disposed above the parasitic leakage barrier, on either side of the gate electrode stack.
Public/Granted literature
- US20140084246A1 SEMICONDUCTOR DEVICE HAVING GERMANIUM ACTIVE LAYER WITH UNDERLYING PARASITIC LEAKAGE BARRIER LAYER Public/Granted day:2014-03-27
Information query
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