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US08710490B2 Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer 有权
具有锗底层寄生漏电阻层的锗活性层的半导体器件

Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer
Abstract:
Semiconductor devices having germanium active layers with underlying parasitic leakage barrier layers are described. For example, a semiconductor device includes a first buffer layer disposed above a substrate. A parasitic leakage barrier is disposed above the first buffer layer. A second buffer layer is disposed above the parasitic leakage barrier. A germanium active layer is disposed above the second buffer layer. A gate electrode stack is disposed above the germanium active layer. Source and drain regions are disposed above the parasitic leakage barrier, on either side of the gate electrode stack.
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