Invention Grant
- Patent Title: Nitride semiconductor device
- Patent Title (中): 氮化物半导体器件
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Application No.: US11870836Application Date: 2007-10-11
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Publication No.: US08698198B2Publication Date: 2014-04-15
- Inventor: Masahiko Kuraguchi
- Applicant: Masahiko Kuraguchi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-286332 20061020
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A nitride semiconductor device includes: a first nitride semiconductor layer formed of non-doped AlXGa1-XN (0≦X
Public/Granted literature
- US20080093626A1 NITRIDE SEMICONDUCTOR DEVICE Public/Granted day:2008-04-24
Information query
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