Invention Grant
- Patent Title: Method and system for setting a pinned layer in a magnetic tunneling junction
- Patent Title (中): 用于设置磁隧道结中钉扎层的方法和系统
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Application No.: US13332093Application Date: 2011-12-20
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Publication No.: US08697484B2Publication Date: 2014-04-15
- Inventor: Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi , Xueti Tang , Se Chung Oh , Woo Chang Lim , Jang Eun Lee , Ki Woong Kim , Kyoung Sun Kim
- Applicant: Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi , Xueti Tang , Se Chung Oh , Woo Chang Lim , Jang Eun Lee , Ki Woong Kim , Kyoung Sun Kim
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Convergent Law Group LLP
- Main IPC: H01L29/82
- IPC: H01L29/82

Abstract:
A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer.
Public/Granted literature
- US20130154034A1 METHOD AND SYSTEM FOR SETTING A PINNED LAYER IN A MAGNETIC TUNNELING JUNCTION Public/Granted day:2013-06-20
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