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US08697484B2 Method and system for setting a pinned layer in a magnetic tunneling junction 有权
用于设置磁隧道结中钉扎层的方法和系统

Method and system for setting a pinned layer in a magnetic tunneling junction
Abstract:
A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer.
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