发明授权
- 专利标题： Semiconductor device and methods of operating the same
- 专利标题（中）： 半导体器件及其操作方法
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申请号： US13542372申请日： 2012-07-05
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公开(公告)号： US08687429B2公开(公告)日： 2014-04-01
- 发明人: Seiichi Aritome
- 申请人： Seiichi Aritome
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK Hynix Inc.
- 当前专利权人： SK Hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： William Park & Associates Patent Ltd.
- 优先权： KR10-2011-0066807 20110706; KR10-2012-0068531 20120626
- 主分类号： G11C16/06
- IPC分类号： G11C16/06
摘要：
A method of operating a semiconductor device includes programming selected memory cells by supplying a selected word line with a program voltage which increases and supplying the remaining unselected word lines with a first pass voltage which is substantially constant; and programming the selected memory cells while supplying first unselected word lines adjacent to the selected word line with a second pass voltage increasing in proportion to the program voltage, when a difference between the program voltage and the first pass voltage reaches a critical voltage difference.
公开/授权文献
- US20130010547A1 SEMICONDUCTOR DEVICE AND METHODS OF OPERATING THE SAME 公开/授权日：2013-01-10
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