发明授权
- 专利标题: Semiconductor device and method of manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US11942506申请日: 2007-11-19
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公开(公告)号: US08686526B2公开(公告)日: 2014-04-01
- 发明人: Katsuhiko Kitagawa , Hiroyuki Shinogi , Shinzo Ishibe , Hiroshi Yamada
- 申请人: Katsuhiko Kitagawa , Hiroyuki Shinogi , Shinzo Ishibe , Hiroshi Yamada
- 申请人地址: US AZ Phoenix
- 专利权人: Semiconductor Components Industries, LLC
- 当前专利权人: Semiconductor Components Industries, LLC
- 当前专利权人地址: US AZ Phoenix
- 代理机构: Abel Law Group, LLP
- 优先权: JP2006-313379 20061120
- 主分类号: H01L31/0203
- IPC分类号: H01L31/0203 ; H01L31/18
摘要:
The invention is directed to providing a semiconductor device receiving a blue-violet laser, of which the reliability and yield are enhanced. A device element converting a blue-violet laser into an electric signal is formed on a front surface of a semiconductor substrate. An optically transparent substrate is attached to the front surface of the semiconductor substrate with an adhesive layer being interposed therebetween. The adhesive layer contains transparent silicone. Since the front surface of the device element is covered by the optically transparent substrate, foreign substances are prevented from adhering to the front surface of the device element. Furthermore, the adhesive layer is covered by the optically transparent substrate. This prevents the adhesive layer from being exposed to outside air, thereby preventing the degradation of the adhesive layer 6 due to a blue-violet laser.
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