Invention Grant
- Patent Title: Memory with metal-insulator-metal tunneling program and erase
- Patent Title (中): 记忆与金属绝缘体金属隧道程序和擦除
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Application No.: US11472785Application Date: 2006-06-22
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Publication No.: US08686489B2Publication Date: 2014-04-01
- Inventor: Leonard Forbes
- Applicant: Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
The flash memory cell comprises a sense transistor that has a pair of source/drain lines and a control gate. A coupling metal-insulator-metal capacitor is created between the floating gate and a read wordline. A tunneling metal-insulator-metal capacitor is created between the floating gate and a write/erase bit line. In one embodiment, the insulator is a metal oxide.
Public/Granted literature
- US20060246664A1 Memory with metal-insulator-metal tunneling program and erase Public/Granted day:2006-11-02
Information query
IPC分类:
