Invention Grant
- Patent Title: Graphene transistor with a self-aligned gate
- Patent Title (中): 具有自对准栅极的石墨烯晶体管
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Application No.: US13614530Application Date: 2012-09-13
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Publication No.: US08680512B2Publication Date: 2014-03-25
- Inventor: Phaedon Avouris , Damon B. Farmer , Yu-Ming Lin , Yu Zhu
- Applicant: Phaedon Avouris , Damon B. Farmer , Yu-Ming Lin , Yu Zhu
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A transistor structure is provided which includes a graphene layer located on an insulating layer, a first metal portion overlying a portion of the graphene layer, a second metal portion contacting and overhanging the first metal portion, a first electrode contacting a portion of the graphene layer and laterally offset from a first sidewall of the first metal portion by a lateral spacing, and a second electrode contacting another portion of the graphene layer and laterally offset from a second sidewall of the first metal portion by the lateral spacing.
Public/Granted literature
- US20130009133A1 A GRAPHENE TRANSISTOR WITH A SELF-ALIGNED GATE Public/Granted day:2013-01-10
Information query
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