发明授权
- 专利标题: Two terminal light emitting and lasing devices and methods
- 专利标题(中): 两端发光和激光装置及方法
-
申请号: US12655806申请日: 2010-01-07
-
公开(公告)号: US08675703B2公开(公告)日: 2014-03-18
- 发明人: Gabriel Walter , Milton Feng , Nick Holonyak, Jr.
- 申请人: Gabriel Walter , Milton Feng , Nick Holonyak, Jr.
- 申请人地址: MY Melaka US IL Urbana
- 专利权人: Quantum Electro Opto Systems Sdn. Rhd.,The Board of Trustees of The University of Illinois
- 当前专利权人: Quantum Electro Opto Systems Sdn. Rhd.,The Board of Trustees of The University of Illinois
- 当前专利权人地址: MY Melaka US IL Urbana
- 代理商 Martin Novack
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
A method for producing light emission from a semiconductor structure, including the following steps: providing a semiconductor structure that includes a first semiconductor junction between an emitter region of a first conductivity type and a base region of a second conductivity type opposite to that of the first conductivity type, and a second semiconductor junction between the base region and a drain region; providing, within the base region, a region exhibiting quantum size effects; providing an emitter electrode coupled with the emitter region; providing a base/drain electrode coupled with the base region and the drain region; and applying signals with respect to the emitter and base/drain electrodes to obtain light emission from the semiconductor structure.
公开/授权文献
信息查询