发明授权
- 专利标题： Robust transistors with fluorine treatment
- 专利标题（中）： 具有氟处理的坚固晶体管
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申请号： US13112285申请日： 2011-05-20
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公开(公告)号： US08669589B2公开(公告)日： 2014-03-11
- 发明人: Yifeng Wu , Marcia Moore , Tim Wisleder , Primit Parikh
- 申请人： Yifeng Wu , Marcia Moore , Tim Wisleder , Primit Parikh
- 申请人地址： US CA Goleta
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US CA Goleta
- 代理机构： Koppel, Patrick, Heybl & Philpott
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A semiconductor device, and particularly a high electron mobility transistor (HEMT), having a plurality of epitaxial layers and experiencing an operating (E) field. A negative ion region in the epitaxial layers to counter the operating (E) field. One method for fabricating a semiconductor device comprises providing a substrate and growing epitaxial layers on the substrate. Negative ions are introduced into the epitaxial layers to form a negative ion region to counter operating electric (E) fields in the semiconductor device. Contacts can be deposited on the epitaxial layers, either before or after formation of the negative ion region.
公开/授权文献
- US20110220966A1 ROBUST TRANSISTORS WITH FLUORINE TREATMENT 公开/授权日：2011-09-15
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