Invention Grant
- Patent Title: Transistor including insertion layer and channel layer with different work functions and method of manufacturing the same
- Patent Title (中): 晶体管包括具有不同功函数的插入层和沟道层及其制造方法
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Application No.: US12289252Application Date: 2008-10-23
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Publication No.: US08669551B2Publication Date: 2014-03-11
- Inventor: Sun-il Kim , Young-soo Park , I-hun Song , Chang-jung Kim , Jae-chul Park , Sang-wook Kim
- Applicant: Sun-il Kim , Young-soo Park , I-hun Song , Chang-jung Kim , Jae-chul Park , Sang-wook Kim
- Applicant Address: unknown Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: unknown Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0021567 20080307
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/12
Abstract:
A transistor according to example embodiments may include a channel layer, a source and a drain respectively contacting ends of the channel layer, a gate electrode separated from the channel layer, a gate insulating layer interposed between the channel layer and the gate electrode, and/or an insertion layer that is formed between the channel layer and the gate insulating layer. The insertion layer may have a work function different from that of the channel layer.
Public/Granted literature
- US20090224238A1 Transistor and method of manufacturing the same Public/Granted day:2009-09-10
Information query
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