Invention Grant
US08659959B2 Advanced memory device having improved performance, reduced power and increased reliability
有权
先进的存储器件具有改进的性能,降低功率和增加可靠性
- Patent Title: Advanced memory device having improved performance, reduced power and increased reliability
- Patent Title (中): 先进的存储器件具有改进的性能,降低功率和增加可靠性
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Application No.: US13567353Application Date: 2012-08-06
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Publication No.: US08659959B2Publication Date: 2014-02-25
- Inventor: Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
- Applicant: Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Daniel Morris
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
Public/Granted literature
- US20120300563A1 ADVANCED MEMORY DEVICE HAVING IMPROVED PERFORMANCE, REDUCED POWER AND INCREASED RELIABILITY Public/Granted day:2012-11-29
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