- 专利标题: Methods for low temperature conditioning of process chambers
- 专利标题(中): 处理室低温调理方法
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申请号: US13156082申请日: 2011-06-08
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公开(公告)号: US08658540B2公开(公告)日: 2014-02-25
- 发明人: Yi-Chiau Huang , David K. Carlson , Errol Antonio C. Sanchez , Zhiyuan Ye
- 申请人: Yi-Chiau Huang , David K. Carlson , Errol Antonio C. Sanchez , Zhiyuan Ye
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Moser Taboada
- 代理商 Alan Taboada
- 主分类号: H01L21/306
- IPC分类号: H01L21/306 ; B08B6/00 ; B44C1/22
摘要:
Methods for removing residue from interior surfaces of process chambers are provided herein. In some embodiments, a method of conditioning interior surfaces of a process chamber may include maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius; providing a process gas to the process chamber at the first pressure and the first temperature, wherein the process gas comprises chlorine and nitrogen to remove residue disposed on interior surfaces of the process chamber; and increasing the pressure in the process chamber from the first pressure to a second pressure while continuing to provide the process gas to the process chamber.
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