发明授权
- 专利标题: Semiconductor storage device and storage system
- 专利标题(中): 半导体存储设备和存储系统
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申请号: US12681296申请日: 2008-09-26
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公开(公告)号: US08655350B2公开(公告)日: 2014-02-18
- 发明人: Shigeki Imai , Yukihiro Nakamura , Hiroyuki Ochi , Naohisa Ohta , Sadayasu Ono
- 申请人: Shigeki Imai , Yukihiro Nakamura , Hiroyuki Ochi , Naohisa Ohta , Sadayasu Ono
- 申请人地址: JP Osaka JP Kyoto JP Tokyo
- 专利权人: Sharp Kabushiki Kaisha,Kyoto University,Keio University
- 当前专利权人: Sharp Kabushiki Kaisha,Kyoto University,Keio University
- 当前专利权人地址: JP Osaka JP Kyoto JP Tokyo
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP.
- 优先权: JP2007-258836 20071002; JP2008-182931 20080714
- 国际申请: PCT/JP2008/067490 WO 20080926
- 国际公布: WO2009/044677 WO 20090409
- 主分类号: H04W24/00
- IPC分类号: H04W24/00
摘要:
A pn junction type solar cell is formed in a predetermined region on a substrate made of glass. Light emitted from a light emitting unit reaches an n-type semiconductor layer after it passed through substrate. The solar cell generates electromotive force corresponding to a quantity of the emitted light. A control circuit, a mask ROM, a transmitting circuit and an antenna are formed on an upper side of the solar cell. A surface of a semiconductor storage device is entirely covered with an insulating film to block entry of outside air. The insulating film is typically formed of physicochemically stable glass or silicon dioxide.
公开/授权文献
- US20100214817A1 SEMICONDUCTOR STORAGE DEVICE AND STORAGE SYSTEM 公开/授权日:2010-08-26
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