Invention Grant
- Patent Title: Apparatus of inspecting defect in semiconductor and method of the same
- Patent Title (中): 检测半导体缺陷的装置及其方法
-
Application No.: US13648001Application Date: 2012-10-09
-
Publication No.: US08643834B2Publication Date: 2014-02-04
- Inventor: Akira Hamamatsu , Shunji Maeda , Hisae Shibuya
- Applicant: Akira Hamamatsu , Shunji Maeda , Hisae Shibuya
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2005-209384 20050720
- Main IPC: G01N21/88
- IPC: G01N21/88 ; G01B11/00

Abstract:
When size of a defect on an increasingly miniaturized pattern is obtained by defect inspection apparatus in the related art, a value is inconveniently given, which is different from a measured value of the same defect by SEM. Thus, a dimension value of a defect detected by defect inspection apparatus needs to be accurately calculated to be approximated to a value measured by SEM. To this end, size of the defect detected by the defect inspection apparatus is corrected depending on feature quantity or type of the defect, thereby defect size can be accurately calculated.
Public/Granted literature
- US20130038862A1 APPARATUS OF INSPECTING DEFECT IN SEMICONDUCTOR AND METHOD OF THE SAME Public/Granted day:2013-02-14
Information query