发明授权
- 专利标题： Film deposition method and film deposition apparatus
- 专利标题（中）： 膜沉积法和成膜装置
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申请号： US13471587申请日： 2012-05-15
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公开(公告)号： US08642487B2公开(公告)日： 2014-02-04
- 发明人: Hitoshi Kato , Shigehiro Ushikubo , Tatsuya Tamura , Shigenori Ozaki , Takeshi Kumagai , Hiroyuki Kikuchi
- 申请人： Hitoshi Kato , Shigehiro Ushikubo , Tatsuya Tamura , Shigenori Ozaki , Takeshi Kumagai , Hiroyuki Kikuchi
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： IPUSA, PLLC
- 优先权： JP2011-111627 20110518; JP2011-252832 20111118
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.
公开/授权文献
- US20130130512A1 FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS 公开/授权日：2013-05-23
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