发明授权
- 专利标题： Method and device employing polysilicon scaling
- 专利标题（中）： 采用多晶硅结垢的方法和装置
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申请号： US13294098申请日： 2011-11-10
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公开(公告)号： US08637918B2公开(公告)日： 2014-01-28
- 发明人: Shenqing Fang , Chun Chen , Wenmei Li , Inkuk Kang , Gang Xue , Hyesook Hong
- 申请人： Shenqing Fang , Chun Chen , Wenmei Li , Inkuk Kang , Gang Xue , Hyesook Hong
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A memory and method of manufacture employing word line scaling. A layered stack, including a charge trapping component and a core polysilicon layer, is formed on a core section and a peripheral section of a substrate. A portion of the layered stack, including the core polysilicon layer is then removed from the peripheral section. A peripheral polysilicon layer, which is thicker than the core polysilicon layer of the layered stack, is next formed on the layered stack and the peripheral section. The layered stack is then isolated from the peripheral polysilicon layer by removing a portion of the peripheral polysilicon layer from the core section, and polysilicon lines are patterned in the isolated layered stack.
公开/授权文献
- US20120056260A1 METHOD AND DEVICE EMPLOYING POLYSILICON SCALING 公开/授权日：2012-03-08
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