发明授权
- 专利标题： Through silicon via repair
- 专利标题（中）： 通过硅片修复
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申请号： US13013378申请日： 2011-01-25
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公开(公告)号： US08637353B2公开(公告)日： 2014-01-28
- 发明人: Michel J. Abou-Khalil , Robert J. Gauthier, Jr. , Tom C. Lee , Junjun Li , Souvick Mitra , Christopher S. Putnam
- 申请人： Michel J. Abou-Khalil , Robert J. Gauthier, Jr. , Tom C. Lee , Junjun Li , Souvick Mitra , Christopher S. Putnam
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Wood, Herron & Evans LLP
- 代理商 Anthony J. Canale
- 主分类号： H01L21/82
- IPC分类号： H01L21/82
摘要：
Methods and systems for altering the electrical resistance of a wiring path. The electrical resistance of the wiring path is compared with a target electrical resistance value. If the electrical resistance of the wiring path exceeds the target electrical resistance value, an electrical current is selectively applied to the wiring path to physically alter a portion of the wiring path. The current may be selected to alter the wiring path such that the electrical resistance drops to a value less than or equal to the target electrical resistance value.
公开/授权文献
- US20120190133A1 THROUGH SILICON VIA REPAIR 公开/授权日：2012-07-26
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