发明授权
- 专利标题： Semiconductor device and test method
- 专利标题（中）： 半导体器件及测试方法
-
申请号： US13482146申请日： 2012-05-29
-
公开(公告)号： US08633571B2公开(公告)日： 2014-01-21
- 发明人: Akihiko Okutsu , Hitoshi Saito , Yoshiaki Okano
- 申请人： Akihiko Okutsu , Hitoshi Saito , Yoshiaki Okano
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2011-153273 20110711
- 主分类号： H01L23/544
- IPC分类号： H01L23/544 ; H01L29/66
摘要：
A semiconductor device includes a semiconductor substrate including an element region, an inner sealing and an outer sealing which are formed on the element region and have a first opening part and a second opening part, respectively, a multilayer interconnection structure which is formed on the substrate and stacks multiple inter-layer insulation films each including a wiring layer, a moisture resistant film formed between a first inter-layer insulation film and a second inter-layer insulation film which are included in the multilayer interconnection structure, a first portion which extended from a first side of the moisture resistant film and passes the first opening part, a second portion which extended from a second side of the moisture resistant film and passes through the second opening part, and a wiring pattern including a via plug which penetrates the moisture resistant film and connects the first portion and the second portion.
公开/授权文献
- US20130015587A1 SEMICONDUCTOR DEVICE AND TEST METHOD 公开/授权日：2013-01-17
信息查询
IPC分类:
