发明授权
- 专利标题： Electro-static discharge protection circuit and semiconductor device
- 专利标题（中）： 静电放电保护电路和半导体器件
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申请号： US13038910申请日： 2011-03-02
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公开(公告)号： US08633543B2公开(公告)日： 2014-01-21
- 发明人: Kazutoshi Ohta , Kenji Hashimoto
- 申请人： Kazutoshi Ohta , Kenji Hashimoto
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Arent Fox LLP
- 优先权： JP2010-064979 20100319
- 主分类号： H01L27/02
- IPC分类号： H01L27/02
摘要：
An electro-static discharge protection circuit includes: a PNPN junction, a P-type side of the PNPN junction being coupled to a terminal, an N-type side of the PNPN junction being coupled to ground; and a P-type metal oxide semiconductor transistor, a source and a gate of the P-type metal oxide semiconductor transistor being coupled to an N-type side of a PN junction whose P-type side coupled to the ground, and a drain of the P-type metal oxide semiconductor transistor being coupled to the terminal.
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