发明授权
- 专利标题： IE-type trench gate IGBT
- 专利标题（中）： IE型沟槽栅极IGBT
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申请号： US13470473申请日： 2012-05-14
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公开(公告)号： US08633510B2公开(公告)日： 2014-01-21
- 发明人: Hitoshi Matsuura , Yoshito Nakazawa
- 申请人： Hitoshi Matsuura , Yoshito Nakazawa
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Mattingly & Malur, PC
- 优先权： JP2011-109341 20110516; JP2012-019942 20120201
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
The invention of the present application provides an IE-type trench IGBT. In the IE-type trench IGBT, each of linear unit cell areas that configure a cell area is comprised principally of linear active and inactive cell areas. The linear active cell area is divided into an active section having an emitter region and an inactive section as seen in its longitudinal direction.
公开/授权文献
- US20120292662A1 IE-TYPE TRENCH GATE IGBT 公开/授权日：2012-11-22
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