Invention Grant
- Patent Title: Heterojunction bipolar transistors and methods of manufacture
- Patent Title (中): 异质结双极晶体管及其制造方法
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Application No.: US13438508Application Date: 2012-04-03
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Publication No.: US08633106B2Publication Date: 2014-01-21
- Inventor: James S. Dunn , Alvin J. Joseph , Anthony K. Stamper
- Applicant: James S. Dunn , Alvin J. Joseph , Anthony K. Stamper
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Richard Kotulak
- Main IPC: H01L21/768
- IPC: H01L21/768
Abstract:
Semiconductor structures and methods of manufacture semiconductors are provided which relate to heterojunction bipolar transistors. The method includes forming two devices connected by metal wires on a same wiring level. The metal wire of a first of the two devices is formed by selectively forming a metal cap layer on copper wiring structures.
Public/Granted literature
- US20120190190A1 HETEROJUNCTION BIPOLAR TRANSISTORS AND METHODS OF MANUFACTURE Public/Granted day:2012-07-26
Information query
IPC分类:
