发明授权
- 专利标题: Plasma processing apparatus and plasma processing method
- 专利标题(中): 等离子体处理装置和等离子体处理方法
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申请号: US13236800申请日: 2011-09-20
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公开(公告)号: US08632688B2公开(公告)日: 2014-01-21
- 发明人: Masaru Izawa , Kouichi Yamamoto , Kenji Nakata , Atsushi Itou
- 申请人: Masaru Izawa , Kouichi Yamamoto , Kenji Nakata , Atsushi Itou
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2011-177388 20110815
- 主分类号: G01L21/30
- IPC分类号: G01L21/30 ; G01R31/00
摘要:
In a plasma processing apparatus in which a wafer is processed while supplying radio frequency power to electrodes disposed in a sample stage in a processing chamber within a reactor via a matching box, by matching a specific value of power at transition points of data values of at least two kinds among characteristic data including light emission intensity of the plasma, magnitude of its time variation, a matching position of the matching box, and a change of a value of a voltage of the radio frequency power supplied to the electrodes detected by varying the power to a plurality of values during the processing with a value detected by using characteristic data which is detected during the processing executed on a wafer of the same kind in a different reactor, the differences of the states inside the processing chamber or plasma among a plurality of semiconductor processing apparatuses or reactors are reduced.
公开/授权文献
- US20130045547A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 公开/授权日:2013-02-21
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