发明授权
US08612836B2 Non-volatile memory device with uncorrectable information region and operation method using the same
有权
具有不可校正信息区域的非易失性存储器件和使用其的操作方法
- 专利标题: Non-volatile memory device with uncorrectable information region and operation method using the same
- 专利标题(中): 具有不可校正信息区域的非易失性存储器件和使用其的操作方法
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申请号: US13025463申请日: 2011-02-11
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公开(公告)号: US08612836B2公开(公告)日: 2013-12-17
- 发明人: Han Bin Yoon , Mi Kyoung Jang , Jin-Hyuk Lee
- 申请人: Han Bin Yoon , Mi Kyoung Jang , Jin-Hyuk Lee
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Lee & Morse, P.C.
- 优先权: KR10-2010-0013183 20100212
- 主分类号: H03M13/00
- IPC分类号: H03M13/00
摘要:
The non-volatile memory system includes a non-volatile memory and a controller. The non-volatile memory includes a data region including a sector region for storing sector data, and an uncorrectable information region for storing uncorrectable sector information on the sector region. The controller includes an information generation unit for generating the uncorrectable sector information that indicates whether the sector region is assigned to an uncorrectable sector region, according to a command output from a host.
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