发明授权
US08608900B2 Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes
有权
具有前馈热控制系统的等离子体反应器,其使用用于适应RF功率变化或晶片温度变化的热模型
- 专利标题: Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes
- 专利标题(中): 具有前馈热控制系统的等离子体反应器,其使用用于适应RF功率变化或晶片温度变化的热模型
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申请号: US11409183申请日: 2006-04-21
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公开(公告)号: US08608900B2公开(公告)日: 2013-12-17
- 发明人: Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
- 申请人: Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
- 申请人地址: US FL Wellington US CA Santa Clara
- 专利权人: B/E Aerospace, Inc.,Applied Materials, Inc.
- 当前专利权人: B/E Aerospace, Inc.,Applied Materials, Inc.
- 当前专利权人地址: US FL Wellington US CA Santa Clara
- 代理机构: Knobbe, Martens, Olson & Bear LLP
- 主分类号: H01L21/3065
- IPC分类号: H01L21/3065 ; C23C16/52 ; C23C16/46 ; C23C16/458 ; C23C16/503 ; C23C16/509
摘要:
A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature. The reactor further includes a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor, and a control processor coupled to the thermal model and to the memory and governing the backside gas pressure source in response to a prediction from the model of a change in the selected pressure that would compensate for the next scheduled change in RF power or implement the next scheduled change in wafer temperature.
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