发明授权
US08597473B1 Reactive physical vapor deposition with sequential reactive gas injection
有权
反应性物理气相沉积与顺序反应气体注入
- 专利标题： Reactive physical vapor deposition with sequential reactive gas injection
- 专利标题（中）： 反应性物理气相沉积与顺序反应气体注入
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申请号： US11161976申请日： 2005-08-24
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公开(公告)号： US08597473B1公开(公告)日： 2013-12-03
- 发明人: Shinzo Onishi
- 申请人： Shinzo Onishi
- 申请人地址： US FL Tampa
- 专利权人： University of South Florida
- 当前专利权人： University of South Florida
- 当前专利权人地址： US FL Tampa
- 代理机构： Smith & Hopen, P.A.
- 代理商 Michele L. Lawson; Robert J. Varkonyi
- 主分类号： C23C14/00
- IPC分类号： C23C14/00 ; C23C14/32 ; C25B9/00 ; C25B11/00 ; C25B13/00
摘要：
The present invention provides a method of controlling a reactive sputtering system used in coating processes. More specifically, the present invention provides a microprocessor-based control system for reactive gases in a sputtering system, particularly during the start-up phase of operation. The preferred demand for such a reactive gas is predicted for every stage of the operation, and the reactive gas supply is amenable to predictive control provided by object program-driven mathematical formulae. The injection of reactive gas using time-advanced, sequential, mathematically-derived procedures simplifies overall system operation and provides a system with an optimal amount of reactive gas at an optimal time.
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