发明授权
- 专利标题： Method and apparatus for filling interconnect structures
- 专利标题（中）： 用于填充互连结构的方法和装置
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申请号： US13108894申请日： 2011-05-16
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公开(公告)号： US08575028B2公开(公告)日： 2013-11-05
- 发明人: Jonathan D. Reid , Huanfeng Zhu
- 申请人： Jonathan D. Reid , Huanfeng Zhu
- 申请人地址： US CA Fremont
- 专利权人： Novellus Systems, Inc.
- 当前专利权人： Novellus Systems, Inc.
- 当前专利权人地址： US CA Fremont
- 代理机构： Weaver Austin Villeneuve & Sampson LLP
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
Methods, apparatus, and systems for depositing copper and other metals are provided. In some implementations, a wafer substrate is provided to an apparatus. The wafer substrate has a surface with field regions and a feature. A copper layer is plated onto the surface of the wafer substrate. The copper layer is annealed to redistribute copper from regions of the wafer substrate to the feature. Implementations of the disclosed methods, apparatus, and systems allow for void-free bottom-up fill of features in a wafer substrate.
公开/授权文献
- US20120264290A1 METHOD AND APPARATUS FOR FILLING INTERCONNECT STRUCTURES 公开/授权日：2012-10-18
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