发明授权
US08569868B2 Device having and method for forming fins with multiple widths 有权
具有用于形成多个宽度的翅片的装置和方法

Device having and method for forming fins with multiple widths
摘要:
A structure for a semiconductor device is disclosed. The structure includes a first feature and a second feature. The first feature and the second feature are formed simultaneously in a single etch process from a same monolithic substrate layer and are integrally and continuously connected to each other. The first feature has a width dimension of less than a minimum feature size achievable by lithography and the second feature has a width dimension of at least equal to a minimum feature size achievable by lithography.
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