发明授权
- 专利标题： Multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same
- 专利标题（中）： 陶瓷基板上的多层薄膜电容器及其制造方法
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申请号： US11736408申请日： 2007-04-17
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公开(公告)号： US08569142B2公开(公告)日： 2013-10-29
- 发明人: Ivoyl P. Koutsaroff , Mark Vandermeulen , Andrew Cervin-Lawry , Atin J. Patel
- 申请人： Ivoyl P. Koutsaroff , Mark Vandermeulen , Andrew Cervin-Lawry , Atin J. Patel
- 申请人地址： CA Waterloo, Ontario
- 专利权人： BlackBerry Limited
- 当前专利权人： BlackBerry Limited
- 当前专利权人地址： CA Waterloo, Ontario
- 代理机构： Guntin & Gust, PLC
- 代理商 Andrew Gust
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material. A buffer layer may be included between the ceramic substrate and the thin film MLC. The buffer layer may have a smooth surface with a surface roughness (Ra) less than or equal to 0.08 micrometers (um).
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