发明授权
US08564057B1 Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
有权
功率器件，结构，部件和方法使用横向漂移，固定网络电荷和屏蔽
- 专利标题： Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
- 专利标题（中）： 功率器件，结构，部件和方法使用横向漂移，固定网络电荷和屏蔽
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申请号： US12835636申请日： 2010-07-13
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公开(公告)号： US08564057B1公开(公告)日： 2013-10-22
- 发明人: Mohamed N. Darwish , Jun Zeng
- 申请人： Mohamed N. Darwish , Jun Zeng
- 申请人地址： US CA Santa Clara
- 专利权人： MaxPower Semiconductor, Inc.
- 当前专利权人： MaxPower Semiconductor, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Groover & Associates PLLC
- 代理商 Robert O. Groover, III; Gwendolyn S. S. Groover
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
Lateral power devices where immobile electrostatic charge is emplaced in dielectric material adjoining the drift region. A shield gate is interposed between the gate electrode and the drain, to reduce the Miller charge. In some embodiments the gate electrode is a trench gate, and in such cases the shield electrode too is preferably vertically extended.
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