发明授权
US08564037B2 Semiconductor device having isolation groove and device formation portion
有权
具有隔离沟槽和器件形成部分的半导体器件
- 专利标题： Semiconductor device having isolation groove and device formation portion
- 专利标题（中）： 具有隔离沟槽和器件形成部分的半导体器件
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申请号： US13012305申请日： 2011-01-24
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公开(公告)号： US08564037B2公开(公告)日： 2013-10-22
- 发明人: Takeshi Kishida
- 申请人： Takeshi Kishida
- 申请人地址： JP Tokyo
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Young & Thompson
- 优先权： JP2010-019278 20100129
- 主分类号： H01L27/108
- IPC分类号： H01L27/108
摘要：
A semiconductor device may include, but is not limited to, a semiconductor substrate having a device isolation groove defining first to fourth device formation portions. The second device formation portion is separated from the first device formation portion. The third device formation portion extends from the first device formation portion. The third device formation portion is separated from the second device formation portion. The fourth device formation portion extends from the second device formation portion. The fourth device formation portion is separated from the first and third device formation portions. The third and fourth device formation portions are positioned between the first and second device formation portions.
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