Invention Grant
- Patent Title: Transistors having a composite strain structure, integrated circuits, and fabrication methods thereof
- Patent Title (中): 具有复合应变结构的晶体管，集成电路及其制造方法
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Application No.: US12795088Application Date: 2010-06-07
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Publication No.: US08558289B2Publication Date: 2013-10-15
- Inventor: Chun-Fai Cheng , Hsueh-Chang Sung , Kuan-Yu Chen , Hsien-Hsin Lin , Fung Ka Hing
- Applicant: Chun-Fai Cheng , Hsueh-Chang Sung , Kuan-Yu Chen , Hsien-Hsin Lin , Fung Ka Hing
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/336
Abstract:
A transistor includes a gate electrode disposed over a substrate. At least one composite strain structure is disposed adjacent to a channel below the gate electrode. The at least one composite strain structure includes a first strain region within the substrate. A second strain region is disposed over the first strain region. At least a portion of the second strain region is disposed within the substrate.
Public/Granted literature
- US20110024801A1 TRANSISTORS HAVING A COMPOSITE STRAIN STRUCTURE, INTEGRATED CIRCUITS, AND FABRICATION METHODS THEREOF Public/Granted day:2011-02-03
Information query
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