Invention Grant
- Patent Title: GaN LEDs with improved area and method for making the same
- Patent Title (中): 具有改进面积的GaN LED及其制造方法
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Application No.: US13226404Application Date: 2011-09-06
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Publication No.: US08558247B2Publication Date: 2013-10-15
- Inventor: Long Yang
- Applicant: Long Yang
- Applicant Address: JP Tokyo
- Assignee: Toshiba Techno Center Inc.
- Current Assignee: Toshiba Techno Center Inc.
- Current Assignee Address: JP Tokyo
- Agency: Hogan Lovells US LLP
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L29/267 ; H01L31/12 ; H01L33/00

Abstract:
Enlightening device and method for making the same are disclosed. Individual light emitting devices such as LEDs are separated to form individual dies by process in which a first narrow trench cuts the light emitting portion of the device and a second trench cuts the substrate to which the light emitting portion is attached. The first trench can be less than 10 μm. Hence, a semiconductor area that would normally be devoted to dicing streets on the wafer is substantially reduced thereby increasing the yield of devices. The devices generated by this method can also include base members that are electrically conducting as well as heat conducting in which the base member is directly bonded to the light emitting layers thereby providing improved heat conduction.
Public/Granted literature
- US20120091464A1 GaN LEDs with Improved Area and Method for Making the Same Public/Granted day:2012-04-19
Information query
IPC分类: