Invention Grant
US08549460B2 Supplying power to integrated circuits using a grid matrix formed of through-silicon vias 有权
使用由硅通孔形成的栅格矩阵向集成电路供电

Supplying power to integrated circuits using a grid matrix formed of through-silicon vias
Abstract:
An integrated circuit structure includes a chip including a substrate and a power distribution network. The power distribution network includes a plurality of power through-silicon vias (TSVs) penetrating the substrate, wherein the plurality of power TSVs forms a grid; and a plurality of metal lines in a bottom metallization layer (M1), wherein the plurality of metal lines couples the plurality of power TSVs to integrated circuit devices on the substrate.
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