Invention Grant
- Patent Title: Supplying power to integrated circuits using a grid matrix formed of through-silicon vias
- Patent Title (中): 使用由硅通孔形成的栅格矩阵向集成电路供电
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Application No.: US13559019Application Date: 2012-07-26
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Publication No.: US08549460B2Publication Date: 2013-10-01
- Inventor: Oscar M. K. Law , Kuo H. Wu , Wei-Chih Yeh
- Applicant: Oscar M. K. Law , Kuo H. Wu , Wei-Chih Yeh
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L23/48

Abstract:
An integrated circuit structure includes a chip including a substrate and a power distribution network. The power distribution network includes a plurality of power through-silicon vias (TSVs) penetrating the substrate, wherein the plurality of power TSVs forms a grid; and a plurality of metal lines in a bottom metallization layer (M1), wherein the plurality of metal lines couples the plurality of power TSVs to integrated circuit devices on the substrate.
Public/Granted literature
- US20120290996A1 Supplying Power to Integrated Circuits Using a Grid Matrix Formed of Through-Silicon Vias Public/Granted day:2012-11-15
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