发明授权
- 专利标题： Inverter structure and method for fabricating the same
- 专利标题（中）： 逆变器结构及其制造方法
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申请号： US12324860申请日： 2008-11-27
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公开(公告)号： US08546890B2公开(公告)日： 2013-10-01
- 发明人: Chien-Li Kuo , Chia-Chun Sun , Chuan-Hsien Fu , Chun-Liang Hou , Yun-San Huang
- 申请人： Chien-Li Kuo , Chia-Chun Sun , Chuan-Hsien Fu , Chun-Liang Hou , Yun-San Huang
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/8244 ; H01L27/092
摘要：
An inverter structure is disclosed. The inverter structure includes an NMOS transistor and a PMOS transistor. Preferably, the NMOS transistor includes an n-type gate electrode and an n-type source/drain region, and the PMOS transistor includes a p-type gate electrode and a p-type source/drain region. Specifically, the n-type gate electrode and the p-type gate electrode are physically separated and electrically connected by a conductive contact.
公开/授权文献
- US20100127337A1 INVERTER STRUCTURE AND METHOD FOR FABRICATING THE SAME 公开/授权日：2010-05-27
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