Invention Grant
- Patent Title: Semiconductor device and method of double photolithography process for forming patterns of the semiconductor device
- Patent Title (中): 用于形成半导体器件的图案的双光刻工艺的半导体器件和方法
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Application No.: US12983478Application Date: 2011-01-03
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Publication No.: US08541306B2Publication Date: 2013-09-24
- Inventor: Song-yi Yang , Seung-pil Chung , Dong-hyun Kim , O-ik Kwon , Hong Cho
- Applicant: Song-yi Yang , Seung-pil Chung , Dong-hyun Kim , O-ik Kwon , Hong Cho
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0085510 20100901
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/302 ; H01L21/768

Abstract:
A semiconductor device and a method of forming patterns on a semiconductor device are disclosed. The semiconductor device may include high-density patterns with a minimum size that may be less the resolution limit of a photolithography process, and may have a substrate including a memory cell region and an adjacent connection region, a plurality of first conductive lines extending from the memory cell region to the connection region in a first direction, a plurality of second conductive lines connected from respective first conductive lines to a plurality of pads having a width equal to twice the width of each of the first conductive lines. The method may include two levels of spacer formation to provide sub resolution line widths and spaces as well as selected multiples of the minimum line widths and spaces.
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