Invention Grant
- Patent Title: Multi-beam semiconductor laser apparatus
- Patent Title (中): 多光束半导体激光装置
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Application No.: US13429147Application Date: 2012-03-23
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Publication No.: US08503498B2Publication Date: 2013-08-06
- Inventor: Yoshinori Tanaka , Eiji Miyai , Dai Ohnishi
- Applicant: Yoshinori Tanaka , Eiji Miyai , Dai Ohnishi
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2011-64458 20110323; JP2011-64460 20110323
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A multi-beam semiconductor laser apparatus includes three or more stripe semiconductor laser emission units which are arranged on a substrate, isolation grooves which separate the semiconductor laser emission units from each other, and pad electrodes which are disposed on outer sides of the outermost semiconductor laser emission units. The isolation grooves are formed between the pad electrodes and the semiconductor laser emission units adjacent to the pad electrodes and between adjacent semiconductor laser emission units. A distance between two isolation grooves formed on outer sides of the outermost semiconductor laser light emission units is smaller than a distance between two isolation grooves formed on both sides of inner ones of the semiconductor laser light emission units.
Public/Granted literature
- US20120243569A1 MULTI-BEAM SEMICONDUCTOR LASER APPARATUS Public/Granted day:2012-09-27
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