发明授权
- 专利标题: Semiconductor device and power source device
- 专利标题(中): 半导体器件和电源器件
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申请号: US12980529申请日: 2010-12-29
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公开(公告)号: US08497666B2公开(公告)日: 2013-07-30
- 发明人: Toshio Nagasawa
- 申请人: Toshio Nagasawa
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Mattingly & Malur, PC
- 优先权: JP2010-005956 20100114
- 主分类号: G05F1/10
- IPC分类号: G05F1/10 ; H02M1/00
摘要:
A multi-phase power source device capable of easily changing the number of phases is realized. For example, a plurality of drive units POL[1]-POL[4] corresponding to the number of phases are provided, wherein each POL[n] receives a phase input signal PHI[n] serving as a pulse signal, and generates a phase output signal PHO[n] by delaying PHI[n] by a predetermined cycles of a clock signal CLK. PHI[n] and PHO[n] of each POL[n] are coupled in a ring, wherein each POL[n] performs a switching operation with PHI[n] or PHO[n] as a starting point. In this case, each POL[n] charges and discharges a capacitor Cct commonly coupled to each POL[n] with an equal current, and a frequency of CLK is determined based on this charge and discharge rate. That is, if the number of phases increases n times, the frequency of CLK will be automatically controlled to n times.
公开/授权文献
- US20110169471A1 SEMICONDUCTOR DEVICE AND POWER SOURCE DEVICE 公开/授权日:2011-07-14
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