Invention Grant
- Patent Title: Multiple electrode layer backend stacked capacitor
- Patent Title (中): 多电极层后端层叠电容器
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Application No.: US13043066Application Date: 2011-03-08
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Publication No.: US08497565B2Publication Date: 2013-07-30
- Inventor: Byron Lovell Willaims , Maxwell Walthour Lippitt, III , Betty Mercer , Scott Montgomery , Binghua Hu
- Applicant: Byron Lovell Willaims , Maxwell Walthour Lippitt, III , Betty Mercer , Scott Montgomery , Binghua Hu
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
In a disclosed embodiment, a stacked capacitor (100) has bottom, middle and top metal electrode layers (141A, 141B, 141C) interleaved with dielectric layers (142A, 142B) conformally disposed within holes (140A, 140B, 140C) in a protective overcoat or backend dielectric layer (110) over a top metal layer (115) of an integrated circuit (105). A top electrode (155) contacts the top metal electrode layer (141C). A bottom electrode (150) electrically couples an isolated part of the top metal electrode layer (141C) through a bottom electrode via (165A) to a first contact node (135A) in the top metal layer (115) which is in contact with the bottom metal electrode layer (141A). A middle electrode (160) electrically couples a part of the middle metal electrode layer (141B) not covered by the top metal layer (115) through a middle electrode via (165B) to a second contact node (135B) in the top metal electrode layer (115). The sidewalls of the top and middle electrode vias (165A, 165B) are lined with insulating material to electrically isolate the metal electrode layer ends.
Public/Granted literature
- US20110156209A1 MULTIPLE ELECTRODE LAYER BACKEND STACKED CAPACITOR Public/Granted day:2011-06-30
Information query
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